Influence of Si-Doping on Luminescence Properties of AlGaInP/GaInP Multiple Quantum Wells
掺Si对AlGaInP/GaInP多量子阱发光性能的影响

Al 0.3Ga 0.7)In 0.5P/Ga 0.5In 0.5P multiple quantum wells (MQWs) are grown by LP-MOCVD.The influence of Si-doping on the luminescence properties of (Al 0.3Ga 0.7)In 0.5P/Ga 0.5In 0.5P MQWs is studied.For the samples without p-type layers above it,the PL peak wavelength from the MQWs does not vary when Si is doped in MQWs,but the peak intensity slightly decreases and the FWHM is obviously broadened.These phenomena indicate that Si-doping results in worse interface quality of MQWs.However,for the full LED structure samples,the PL intensity of MQWs obviously increases when Si is doped in MQWs.The PL intensity from MQWs with Si-doped barriers is about 13 times stronger than that of undoped MQWs.The PL intensity from MQWs with Si-doped barriers and wells is 28 times as strong as that of undoped MQWs.The reasons are discussed.