%0 Journal Article
%T Influence of Si-Doping on Luminescence Properties of AlGaInP/GaInP Multiple Quantum Wells<br>掺Si对AlGaInP/GaInP多量子阱发光性能的影响
%A LI Shuti
%A Fan Guanghan
%A ZHOU Tianming
%A Zheng Shuwen
%A Wang Hao
%A Guo Zhiyou
%A Sun Huiqing
%A <br>李述体
%A 范广涵
%A 周天明
%A 郑树文
%A 王浩
%A 郭志友
%A 孙慧卿
%J 半导体学报
%D 2005
%I 
%X Al 0.3Ga 0.7)In 0.5P/Ga 0.5In 0.5P multiple quantum wells (MQWs) are grown by LP-MOCVD.The influence of Si-doping on the luminescence properties of (Al 0.3Ga 0.7)In 0.5P/Ga 0.5In 0.5P MQWs is studied.For the samples without p-type layers above it,the PL peak wavelength from the MQWs does not vary when Si is doped in MQWs,but the peak intensity slightly decreases and the FWHM is obviously broadened.These phenomena indicate that Si-doping results in worse interface quality of MQWs.However,for the full LED structure samples,the PL intensity of MQWs obviously increases when Si is doped in MQWs.The PL intensity from MQWs with Si-doped barriers is about 13 times stronger than that of undoped MQWs.The PL intensity from MQWs with Si-doped barriers and wells is 28 times as strong as that of undoped MQWs.The reasons are discussed.
%K AlGaInP
%K MQWs
%K MOCVD
%K photoluminescence<br>多量子阱
%K AlGaInP
%K MOCVD
%K Si掺杂
%K 光致发光
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=E612BEE0A372D421&yid=2DD7160C83D0ACED&vid=96C778EE049EE47D&iid=B31275AF3241DB2D&sid=545EC3172B3789BC&eid=4E3541241257D204&journal_id=1674-4926&journal_name=半导体学报&referenced_num=0&reference_num=16