Theory Analysis of trr-T Characteristic of Fast Recover Diode with MLD Structure
MLD结构快恢复二极管trr-T特性的理论分析

The fast recover diode with minority-carrier lifetime lateral non-uniform distribution(MLD) structure is analyzed theoretically.Based on the minority lateral distribution in the n-type base region of the MLD diode,an explanation of the recover time-temperature (t rr-T) stability which can be improved by the MLD structure is given.The stability is also discussed by the concept of average-lifetime.Furthermore,the simulation results verify the correctness of the theory analysis.