%0 Journal Article
%T Theory Analysis of trr-T Characteristic of Fast Recover Diode with MLD Structure<br>MLD结构快恢复二极管trr-T特性的理论分析
%A Pan Feixi
%A Chen Xingbi
%A <br>潘飞蹊
%A 陈星弼
%J 半导体学报
%D 2005
%I 
%X The fast recover diode with minority-carrier lifetime lateral non-uniform distribution(MLD) structure is analyzed theoretically.Based on the minority lateral distribution in the n-type base region of the MLD diode,an explanation of the recover time-temperature (t rr-T) stability which can be improved by the MLD structure is given.The stability is also discussed by the concept of average-lifetime.Furthermore,the simulation results verify the correctness of the theory analysis.
%K recovery time
%K temperature stability
%K average lifetime<br>反恢时间
%K 温度稳定性
%K 平均寿命
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=4B4405DF23015DB9&yid=2DD7160C83D0ACED&vid=96C778EE049EE47D&iid=CA4FD0336C81A37A&sid=6FBD78E3BAB60869&eid=7C72DBC13F2D71EC&journal_id=1674-4926&journal_name=半导体学报&referenced_num=0&reference_num=13