Growth of SiGe/Si Heterostructures by UHV/CVD
UHV/CVD生长SiGe/Si异质结构材料

Si 1-x Ge x alloys and Si 1-x Ge x /Si multiple quantum wells are grown on Si(100) by ultrahigh vacuum chemical vapor deposition (UHV/CVD) using Si\-2H\-6 and GeH\-4 as reactant gases. The crystallinity, morphology, uniformity and interface are studied by atom force microscopy (AFM), double crystal X\|ray diffraction (DCXRD) and transmission electron microscopy (TEM). It is found that the surface of the epitaxial layers is smooth, the average rough is 1.2nm. The samples are uniform. The average deviations of the growth rate and the fraction of Ge in single sample are 3 31% and 2 01%, respectively. Satellite peaks and Pendellosung streaks in the X\|ray diffraction curves of Si 1-x Ge x /Si MQWs show that the materials have good crystallinity and sharp interface. No dislocation is found in TEM measurement.