%0 Journal Article
%T Growth of SiGe/Si Heterostructures by UHV/CVD<br>UHV/CVD生长SiGe/Si异质结构材料
%A CHENG Bu
%A |wen
%A LI Dai
%A |zong
%A HUANG Chang
%A |jun
%A YU Zhuo
%A ZHANG Chun
%A |hui
%A WANG Yu
%A |tian
%A YU Jin
%A |zhong
%A WANG Qi
%A |ming
%A <br>成步文
%A 李代宗
%A 黄昌俊
%A 于卓
%A 张春晖
%A 王玉田
%A 余金中
%A 王启明
%J 半导体学报
%D 2000
%I 
%X Si 1-x Ge x alloys and Si 1-x Ge x /Si multiple quantum wells are grown on Si(100) by ultrahigh vacuum chemical vapor deposition (UHV/CVD) using Si\-2H\-6 and GeH\-4 as reactant gases. The crystallinity, morphology, uniformity and interface are studied by atom force microscopy (AFM), double crystal X\|ray diffraction (DCXRD) and transmission electron microscopy (TEM). It is found that the surface of the epitaxial layers is smooth, the average rough is 1.2nm. The samples are uniform. The average deviations of the growth rate and the fraction of Ge in single sample are 3 31% and 2 01%, respectively. Satellite peaks and Pendellosung streaks in the X\|ray diffraction curves of Si 1-x Ge x /Si MQWs show that the materials have good crystallinity and sharp interface. No dislocation is found in TEM measurement.
%K SiGe
%K Heterojunction
%K UHV/CVD<br>SiGe
%K 异质结
%K UHV/CVD
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=2FFDE2815AAA5229&yid=9806D0D4EAA9BED3&vid=659D3B06EBF534A7&iid=38B194292C032A66&sid=1D01216AD76577EC&eid=01622E3E475F966C&journal_id=1674-4926&journal_name=半导体学报&referenced_num=9&reference_num=9