Dependence of Hole Mobility in PDSOI PMOSFET on Isolation Process
隔离技术对SOI PMOSFET中空穴迁移率的影响

Partially depleted SOI PMOSFETs isolated by LOCOS a nd MESA are fabricated on SIMOX and smart-cut substrates.Though the threshold v oltage of PMOS isolated by LOCOS is lower,the transconductance and hole mobility are clearly lower than its counterpart of MESA.The simulation shows that the re duced hole mobility is attributed to the increased compressive stress of the sil icon film,resulting from high volumetric expansion of the field oxide in the cas e of LOCOS isolation.