%0 Journal Article
%T Dependence of Hole Mobility in PDSOI PMOSFET on Isolation Process<br>隔离技术对SOI PMOSFET中空穴迁移率的影响
%A Zhao Hongchen
%A Hai Chaohe
%A Han Zhengsheng
%A Qian He
%A <br>赵洪辰
%A 海潮和
%A 韩郑生
%A 钱鹤
%J 半导体学报
%D 2004
%I 
%X Partially depleted SOI PMOSFETs isolated by LOCOS a nd MESA are fabricated on SIMOX and smart-cut substrates.Though the threshold v oltage of PMOS isolated by LOCOS is lower,the transconductance and hole mobility are clearly lower than its counterpart of MESA.The simulation shows that the re duced hole mobility is attributed to the increased compressive stress of the sil icon film,resulting from high volumetric expansion of the field oxide in the cas e of LOCOS isolation.
%K LOCOS
%K MESA
%K mobility
%K stress<br>LOCOS
%K MESA
%K 迁移率
%K 应力
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=3A238CE1CCBA9065&yid=D0E58B75BFD8E51C&vid=C5154311167311FE&iid=F3090AE9B60B7ED1&sid=5D2AEAEFE5867538&eid=A9974A3EA5885863&journal_id=1674-4926&journal_name=半导体学报&referenced_num=0&reference_num=6