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OALib Journal期刊
ISSN: 2333-9721
费用：99美元
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Low Dark Current High Gain InGaAs/Inp SAGM APD
低漏电高增益InGaAs/InP SAGM雪崩光电二极管
Wang Shutang/Institute of Semiconductors, Academia Sinica, BeijingZeng Jing/Institute of Semiconductors, Academia Sinica, BeijingLi Feng/Institute of Semiconductors, Academia Sinica, BeijingHu Chunyang/Institute of Semiconductors, Academia Sinica, BeijingXia Caihong/Institute of Semiconductors, Academia Sinica, BeijingSun Jie/Institute of Semiconductors, Academia Sinica, BeijingFan Aixiang/Institute of Semiconductors, Academia Sinica, Beijing,
王树堂, 曾靖, 李锋, 胡春阳, 夏彩虹, 孙捷, 樊爱香
Keywords: InGaAs,APD,Low dark curient,High gain
雪崩二极管,InGaAs,SAGM,低漏电
Abstract:
根据器件结构的优化设计,严格控制生长参数以及理想的器件制备工艺获得了低漏电高增益InGaAs/InP SAGM雪崩光电二极管。测量了百余支器件,0.9V_b下漏电流I_d<20nA;响应度～(0.7—0.8)mA/mW,最大倍增30—85(入射光波长1.3μm,功率1.6μW),参与倍增的暗电流l_(dm)最小可达0.25nA。 Full-Text
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