%0 Journal Article
%T Low Dark Current High Gain InGaAs/Inp SAGM APD<br>低漏电高增益InGaAs/InP SAGM雪崩光电二极管
%A Wang Shutang/Institute of Semiconductors
%A Academia Sinica
%A BeijingZeng Jing/Institute of Semiconductors
%A Academia Sinica
%A BeijingLi Feng/Institute of Semiconductors
%A Academia Sinica
%A BeijingHu Chunyang/Institute of Semiconductors
%A Academia Sinica
%A BeijingXia Caihong/Institute of Semiconductors
%A Academia Sinica
%A BeijingSun Jie/Institute of Semiconductors
%A Academia Sinica
%A BeijingFan Aixiang/Institute of Semiconductors
%A Academia Sinica
%A Beijing
%A <br>王树堂
%A 曾靖
%A 李锋
%A 胡春阳
%A 夏彩虹
%A 孙捷
%A 樊爱香
%J 半导体学报
%D 1990
%I 
%X 根据器件结构的优化设计,严格控制生长参数以及理想的器件制备工艺获得了低漏电高增益InGaAs/InP SAGM雪崩光电二极管。测量了百余支器件,0.9V_b下漏电流I_d<20nA;响应度～(0.7—0.8)mA/mW,最大倍增30—85(入射光波长1.3μm,功率1.6μW),参与倍增的暗电流l_(dm)最小可达0.25nA。
%K InGaAs
%K APD
%K Low dark curient
%K High gain<br>雪崩二极管
%K InGaAs
%K SAGM
%K 低漏电
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=DC402DA2FADF5675&yid=8D39DA2CB9F38FD0&vid=708DD6B15D2464E8&iid=59906B3B2830C2C5&sid=808D6B9EB5A8B4B4&eid=6D947E6CDDEFFBDE&journal_id=1674-4926&journal_name=半导体学报&referenced_num=0&reference_num=0