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半导体学报 1990
A Novel Method for Fabricating Higher Mobility MOSFET''''s
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Abstract:
The MOSFET's and MOS capacitors with HF-doped thin oxides have been shown to haveexcellent electrical characteristics. The effective surface mobilities of such HF-devices are 1.7-2.4 times higher than those of conventional devices over the channel effective field range studied. It indicates that MOS device with higher speeds could be achieved by HF-enhanced oxidation.
