%0 Journal Article
%T A Novel Method for Fabricating Higher Mobility MOSFET''''s<br>提高MOSFET沟道载流子迁移率的新方法
%A Long Wei/
%A <br>龙伟
%A 徐元森
%J 半导体学报
%D 1990
%I 
%X The MOSFET's and MOS capacitors with HF-doped thin oxides have been shown to haveexcellent electrical characteristics. The effective surface mobilities of such HF-devices are 1.7-2.4 times higher than those of conventional devices over the channel effective field range studied. It indicates that MOS device with higher speeds could be achieved by HF-enhanced oxidation.
%K MOSFET
%K Mobility
%K Silicon oxidation
%K Fluorine
%K SiO_2 film<br>MOSFET
%K 载流子
%K 迁移率
%K SiO2层
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=FE4C5BEEF2011A41&yid=8D39DA2CB9F38FD0&vid=708DD6B15D2464E8&iid=708DD6B15D2464E8&sid=A766A50385B9FB1F&eid=750AE535ABE3D62A&journal_id=1674-4926&journal_name=半导体学报&referenced_num=0&reference_num=0