Lifetime Comparison Between Ultra-Thin N/O Stack and SiO2 Gate Dielectrics Under Constant Vlotage Stress
恒压应力下超薄Si_3N_4/SiO_2叠层栅介质与SiO_2栅介质寿命比较

Ultra-thin N/O stack gate dielectrics and pure oxide gate dielectrics with the same EOT (2.1nm) are used as the samples.A common way for the ultra-thin gate dielectrics lifetime projection with the CVS method is given.Based on this,the lifetime is compared between the ultra-thin N/O stack gate dielectrics and pure oxide gate dielectrics .The result shows that N/O stack gate dielectrics have much longer lifetime than pure oxide gate dielectrics of the same EOT,which also indicates that N/O stack gate dielectrics have better reliability than the pure oxide gate dielectrics do.