%0 Journal Article
%T Lifetime Comparison Between Ultra-Thin N/O Stack and SiO2 Gate Dielectrics Under Constant Vlotage Stress<br>恒压应力下超薄Si_3N_4/SiO_2叠层栅介质与SiO_2栅介质寿命比较
%A Lin Gang
%A Xu Qiuxia
%A <br>林钢
%A 徐秋霞
%J 半导体学报
%D 2004
%I 
%X Ultra-thin N/O stack gate dielectrics and pure oxide gate dielectrics with the same EOT (2.1nm) are used as the samples.A common way for the ultra-thin gate dielectrics lifetime projection with the CVS method is given.Based on this,the lifetime is compared between the ultra-thin N/O stack gate dielectrics and pure oxide gate dielectrics .The result shows that N/O stack gate dielectrics have much longer lifetime than pure oxide gate dielectrics of the same EOT,which also indicates that N/O stack gate dielectrics have better reliability than the pure oxide gate dielectrics do.
%K constant voltage stress(CVS)
%K ultra-thin N/O stack gate dielectrics
%K ultra-thin SiO
%K 2 gate dielectrics
%K gate dielectrics lifetime projection<br>恒压应力
%K 超薄Si3N4/SiO2叠层栅介质
%K 超薄SiO2栅介质
%K 栅介质寿命预测
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=C4B2168B74A78570&yid=D0E58B75BFD8E51C&vid=C5154311167311FE&iid=59906B3B2830C2C5&sid=959B2AB984B945BD&eid=CA1A83B3B8D8D763&journal_id=1674-4926&journal_name=半导体学报&referenced_num=0&reference_num=9