A New Lifetime Prediction Model for n-MOSFETs with Ultrathin Gate Oxides Under Hot-Carrier Stress
超薄栅n-MOSFETs热载流子寿命预测模型

Hot carrier degradation of n MOSFETs under V g=V d stress mode is examined.A new lifetime prediction model electron fluence model is developed based on the universal power law between the degradation of saturated drain current (dI dsat ) and the product of the injected charge fluence times the gate current,which is independent of gate or drain voltages.This model applies to n MOSFETs with ultrathin gate oxides.The lifetime can be estimated under the operation conditions.