%0 Journal Article
%T A New Lifetime Prediction Model for n-MOSFETs with Ultrathin Gate Oxides Under Hot-Carrier Stress<br>超薄栅n-MOSFETs热载流子寿命预测模型
%A MU Fu chen
%A XU Ming zhen
%A TAN Chang hua
%A DUAN Xiao rong
%A <br>穆甫臣
%A 许铭真
%A 谭长华
%A 段小蓉
%J 半导体学报
%D 2001
%I 
%X Hot carrier degradation of n MOSFETs under V g=V d stress mode is examined.A new lifetime prediction model electron fluence model is developed based on the universal power law between the degradation of saturated drain current (dI dsat ) and the product of the injected charge fluence times the gate current,which is independent of gate or drain voltages.This model applies to n MOSFETs with ultrathin gate oxides.The lifetime can be estimated under the operation conditions.
%K HCI
%K hot
%K carrier effect
%K n
%K MOSFET
%K lifetime prediction<br>HCI
%K 热载流子效应
%K n-MOSFET
%K 寿命预测
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=9A5AD83BA4F7D647&yid=14E7EF987E4155E6&vid=BC12EA701C895178&iid=F3090AE9B60B7ED1&sid=10F17081942653E7&eid=A2484BFF38B01808&journal_id=1674-4926&journal_name=半导体学报&referenced_num=0&reference_num=19