Total Dose Radiation Effects of CMOS Operational Amplifier with Different Structures
不同结构CMOS运算放大器电路的电离辐射效应

The total dose radiation effects of CMOS operational amplifiers (op\|am ps)with N and P channel transistors inputs have been studied. Influences contributed by some sub sidiary circuits in irradiation on the op\|amps' characteristics have also been investigated. It i s shown that the main mechanism of the op\|amps with P\|channel transistor input,which makes the performance degrade is the unbalance of the N\|channel transistors' mirror\|load. On the other hand, the in crease of the leakage current of differential pair is the most important reason for the deter ioration of the op\|amps behavior with N\|channel transistor input.