%0 Journal Article
%T Total Dose Radiation Effects of CMOS Operational Amplifier with Different Structures<br>不同结构CMOS运算放大器电路的电离辐射效应
%A REN Di
%A |yuan
%A LU Wu
%A GUO Qi
%A YU Xue
%A |feng
%A YAN Rong
%A |liang
%A <br>任迪远
%A 陆妩
%A 郭旗
%A 余学锋
%A 严荣良
%A 胡浴红
%A 王明刚
%A 赵元富
%J 半导体学报
%D 2000
%I 
%X The total dose radiation effects of CMOS operational amplifiers (op\|am ps)with N and P channel transistors inputs have been studied. Influences contributed by some sub sidiary circuits in irradiation on the op\|amps' characteristics have also been investigated. It i s shown that the main mechanism of the op\|amps with P\|channel transistor input,which makes the performance degrade is the unbalance of the N\|channel transistors' mirror\|load. On the other hand, the in crease of the leakage current of differential pair is the most important reason for the deter ioration of the op\|amps behavior with N\|channel transistor input.
%K CMOS operational amplifier
%K total dose radiation
%K oxide charges
%K interface states<br>CMOS
%K 运算放大器
%K 电离辐射效应
%K 氧化物电存
%K 界面态
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=BBD5F416DF6084A6&yid=9806D0D4EAA9BED3&vid=659D3B06EBF534A7&iid=9CF7A0430CBB2DFD&sid=9124D83E61CF1CD0&eid=6484E0C1B87D264C&journal_id=1674-4926&journal_name=半导体学报&referenced_num=1&reference_num=13