Deep submicron PDSOI thermal resistance extraction
深亚微米PDSOI的热阻提取

Deep submicron partially depleted silicon on insulator (PDSOI) MOSFETs with H-gate were fabricated based on the 0.35 μm SOI process developed by the Institute of Microelectronics of the Chinese Academy of Sciences. Because the self-heating effect (SHE) has a great influence on SOI, extractions of thermal resistance were done for accurate circuit simulation by using the body-source diode as a thermometer. The results show that the thermal resistance in an SOI NMOSFET is lower than that in an SOI PMOSFET; and the thermal resistance in an SOI NMOSFET with a long channel is lower than that with a short channel. This offers a great help to SHE modeling and parameter extraction.