%0 Journal Article
%T Deep submicron PDSOI thermal resistance extraction<br>深亚微米PDSOI的热阻提取
%A Bu Jianhui
%A Bi Jinshun
%A Xi Linmao
%A Han Zhengsheng
%A <br>卜建辉
%A 毕津顺
%A 习林茂
%A 韩郑生
%J 半导体学报
%D 2010
%I 
%X Deep submicron partially depleted silicon on insulator (PDSOI) MOSFETs with H-gate were fabricated based on the 0.35 μm SOI process developed by the Institute of Microelectronics of the Chinese Academy of Sciences. Because the self-heating effect (SHE) has a great influence on SOI, extractions of thermal resistance were done for accurate circuit simulation by using the body-source diode as a thermometer. The results show that the thermal resistance in an SOI NMOSFET is lower than that in an SOI PMOSFET; and the thermal resistance in an SOI NMOSFET with a long channel is lower than that with a short channel. This offers a great help to SHE modeling and parameter extraction.
%K thermal resistance
%K self heating effect
%K PDSOI<br>热阻
%K 自加热效应
%K PDSOI
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=50F1CF5F22C5E744AF6148DA5CCC304D&yid=140ECF96957D60B2&vid=4AD960B5AD2D111A&iid=9CF7A0430CBB2DFD&sid=9F2B8DC015C8991D&eid=38B194292C032A66&journal_id=1674-4926&journal_name=半导体学报&referenced_num=0&reference_num=0