Reliability Model of IC Interconnect Based on Defect Distribution Statistics
基于缺陷统计分布的IC互连线可靠性模型

Taking process defects into account,the device lifetime under dc and pulse dc stresses are discussed.Based on the analysis,a new model of interconnect lifetime is presented to estimate the variation in the interconnect lifetime when considering the defects,which is helpful to the IC design.The simulation results prove the model valid.