%0 Journal Article
%T Reliability Model of IC Interconnect Based on Defect Distribution Statistics<br>基于缺陷统计分布的IC互连线可靠性模型
%A CHEN Tai feng
%A HAO Yue
%A ZHAO Tian xu
%A ZHANG Jin cheng
%A <br>陈太峰
%A 郝跃
%A 赵天绪
%A 张进城
%J 半导体学报
%D 2001
%I 
%X Taking process defects into account,the device lifetime under dc and pulse dc stresses are discussed.Based on the analysis,a new model of interconnect lifetime is presented to estimate the variation in the interconnect lifetime when considering the defects,which is helpful to the IC design.The simulation results prove the model valid.
%K reliability
%K defect
%K interconnect lifetime
%K IC design<br>可靠性
%K 缺陷
%K 互连线寿命
%K IC设计
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=A598AFD5B077414F&yid=14E7EF987E4155E6&vid=BC12EA701C895178&iid=F3090AE9B60B7ED1&sid=C91D29281694E9C8&eid=5D2AEAEFE5867538&journal_id=1674-4926&journal_name=半导体学报&referenced_num=0&reference_num=9