Effect of Emitter Ballasting Resistor on In0.49Ga0.51P/GaAs HBT Characteristics
发射极镇流电阻对In_(0.49)Ga_(0 .51)P/GaAs HBT特性的影响

The collapse of current often occurs in multi transistors heterojunction bipolar transistors.It is demonstrated that the emitter ballasting resistor can prevent the collapse of current.Effect of emitter ballasting resistor on In 0.49 Ga 0.51 P/GaAs HBT characteristics is studied and analyzed.