%0 Journal Article
%T Effect of Emitter Ballasting Resistor on In0.49Ga0.51P/GaAs HBT Characteristics<br>发射极镇流电阻对In_(0.49)Ga_(0 .51)P/GaAs HBT特性的影响
%A Shi Ruiying
%A Sun Haifeng
%A Yuan Zhipeng
%A Luo Mingxiong
%A Wang Ning
%A <br>石瑞英
%A 孙海锋
%A 袁志鹏
%A 罗明雄
%A 汪宁
%J 半导体学报
%D 2004
%I 
%X The collapse of current often occurs in multi transistors heterojunction bipolar transistors.It is demonstrated that the emitter ballasting resistor can prevent the collapse of current.Effect of emitter ballasting resistor on In 0.49 Ga 0.51 P/GaAs HBT characteristics is studied and analyzed.
%K emitter ballasting resistor
%K In
%K 0
%K 49
%K Ga
%K 0
%K 51
%K P/GaAs HBT
%K DC characteristics
%K RF characteristics<br>发射极镇流电阻
%K In0.49Ga0.51P/GaAs
%K HBT
%K 直流特性
%K 高频特性
%K 发射极镇流电阻
%K 高频特性
%K 影响
%K Emitter
%K Effect
%K Characteristics
%K 分析
%K 理论
%K 实验现象
%K GaAs
%K 研究
%K 问题
%K 坍塌
%K 电流
%K 并联
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=669CBFC69FC53992&yid=D0E58B75BFD8E51C&vid=C5154311167311FE&iid=DF92D298D3FF1E6E&sid=6D80B994DAB4686B&eid=9EB9AF946ABE60ED&journal_id=1674-4926&journal_name=半导体学报&referenced_num=2&reference_num=8