Comparison of Fabrication Techniques of SIMON Materials with Buried Multi-Layers
具有复合埋层的新型SIMON材料的制备

SIMON SOI materials are successfully fabricated by sequential implantation and annealing of oxygen and nitrogen ions with quite a few combinatorial dose energy sequence conditions.The results indicate that superior SIMON SOI wafers with highly sharp interface structure can be fabricated by choosing dose energy implantation conditions and implantation sequence carefully.Different fabrication methods are compared.