%0 Journal Article
%T Comparison of Fabrication Techniques of SIMON Materials with Buried Multi-Layers<br>具有复合埋层的新型SIMON材料的制备
%A Yi Wanbing
%A Chen Meng
%A Zhang Enxia
%A Liu Xianghua
%A Chen Jing
%A Dong Yemin
%A Jin Bo
%A Liu Zhongli
%A Wang Xi
%A <br>易万兵
%A 陈猛
%A 张恩霞
%A 刘相华
%A 陈静
%A 董业民
%A 金波
%A 刘忠立
%A 王曦
%J 半导体学报
%D 2004
%I 
%X SIMON SOI materials are successfully fabricated by sequential implantation and annealing of oxygen and nitrogen ions with quite a few combinatorial dose energy sequence conditions.The results indicate that superior SIMON SOI wafers with highly sharp interface structure can be fabricated by choosing dose energy implantation conditions and implantation sequence carefully.Different fabrication methods are compared.
%K SIMON
%K SOI
%K co
%K implantation of nitrogen and oxygen<br>SIMON
%K SOI
%K 氮氧共注入
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=0DF38956102B4F1F&yid=D0E58B75BFD8E51C&vid=C5154311167311FE&iid=DF92D298D3FF1E6E&sid=725C082EB6FD280F&eid=F2947E14627CD734&journal_id=1674-4926&journal_name=半导体学报&referenced_num=1&reference_num=6