A Novel Compound Collector InGaP/GaAs Heterojunction Bipolar Transistor
新结构复合收集区InGaP/GaAs异质结双极晶体管结构设计及特性

A novel compound collector InGaP/GaAs heterojunction bipolar transistor is designed based on electron velocity overshoot phenomena.Cutoff frequency f T not only increases,offset voltage but also reduces in this structure.The cutoff frequency of 77GHz,with a DC current gain of 100,and the offset voltage down to 70mV are obtained.At the same time,DC and microwave characteristics are compared with a reported paper.