%0 Journal Article
%T A Novel Compound Collector InGaP/GaAs Heterojunction Bipolar Transistor<br>新结构复合收集区InGaP/GaAs异质结双极晶体管结构设计及特性
%A Shi Ruiying
%A Liu Xunchun
%A Yuan Zhipeng
%A Wang Runmei
%A Sun Haifeng
%A <br>石瑞英
%A 刘训春
%A 袁志鹏
%A 王润梅
%A 孙海锋
%J 半导体学报
%D 2004
%I 
%X A novel compound collector InGaP/GaAs heterojunction bipolar transistor is designed based on electron velocity overshoot phenomena.Cutoff frequency f T not only increases,offset voltage but also reduces in this structure.The cutoff frequency of 77GHz,with a DC current gain of 100,and the offset voltage down to 70mV are obtained.At the same time,DC and microwave characteristics are compared with a reported paper.
%K velocity overshoot
%K compound collector
%K heterojunction bipolar transistor
%K DC and microwave characteristics<br>电子运动速度过冲
%K 复合收集区
%K 异质结双极晶体管
%K 直流和射频特性
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=253830A2B0F3C4F9&yid=D0E58B75BFD8E51C&vid=C5154311167311FE&iid=38B194292C032A66&sid=EC34D52BE81085CE&eid=CA9ED1AB4D9E3E04&journal_id=1674-4926&journal_name=半导体学报&referenced_num=0&reference_num=1