Flow Pattern Defects in Czochralski Silicon Crystals
直拉硅单晶中的流动图形缺陷

s:The flow pattern defects (FPDs) in 150mm in diameter p-type Czochralski silicon are revealed by Secco etchant,and the structures of FPDs are studied by the method of atomic force microscope (AFM).A little octahedron void surrounded by {111} planes is observed on the tip of the FPDs,which contrasts with the results that the FPDs are interstitial type concluded by Takeno et al.Moreover,the octahedron voids will change to shallow orbicular pit and disappear at last if the etching time is prolonged.