%0 Journal Article
%T Flow Pattern Defects in Czochralski Silicon Crystals<br>直拉硅单晶中的流动图形缺陷
%A Liu Caichi
%A Qiao Zhi
%A Zhou Qigang
%A Wang Jing
%A Hao Qiuyan
%A Zhang Jianfeng
%A Li Yangxian
%A Ren Bingyan
%A <br>刘彩池
%A 乔治
%A 周旗钢
%A 王敬
%A 郝秋艳
%A 张建峰
%A 李养贤
%A 任丙彦
%J 半导体学报
%D 2004
%I 
%X s:The flow pattern defects (FPDs) in 150mm in diameter p-type Czochralski silicon are revealed by Secco etchant,and the structures of FPDs are studied by the method of atomic force microscope (AFM).A little octahedron void surrounded by {111} planes is observed on the tip of the FPDs,which contrasts with the results that the FPDs are interstitial type concluded by Takeno et al.Moreover,the octahedron voids will change to shallow orbicular pit and disappear at last if the etching time is prolonged.
%K CzSi
%K FPDs
%K void
%K AFM<br>直拉硅单晶
%K FPDs
%K 空洞
%K 原子力显微镜
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=07EDBD6BCA1729A3&yid=D0E58B75BFD8E51C&vid=C5154311167311FE&iid=CA4FD0336C81A37A&sid=BFE7933E5EEA150D&eid=E84BBBDDD74F497C&journal_id=1674-4926&journal_name=半导体学报&referenced_num=2&reference_num=10