Indium Doping to Improve Heterojunction of AlGaAs/GaAs and Its Application
掺In对反型AlGaAs/GaAs异质界面质量的改善及其应用

Effects of In doping on the optical properties of AlGs/Gs quantum wells (QWs ) and the electrical properties of inverted AlGs/Gs high electron mobility t ransistors (HEMTs) are investigated.It is found that a little In incorporation i n AlGs layers can decrease the photoluminescence linewidths of AlGs/Gs QWs drastically and a little In doping in AlGs layer can significantly increase t he electron mobilities of inverted AlGs/Gs HEMTs at 77K.All these results de monstrate that In doping can reduce the interface roughness due to In as a surfa ctant which can enhance the surface migration of Al adatoms during molecular bea m epitaxy.