%0 Journal Article
%T Indium Doping to Improve Heterojunction of AlGaAs/GaAs and Its Application<br>掺In对反型AlGaAs/GaAs异质界面质量的改善及其应用
%A Shang Xunzhong
%A Wang Wenchong
%A Guo Liwei
%A Wu Shudong
%A Niu Pingjuan
%A Huang Qi
%A Zhou Junming
%A <br>尚勋忠
%A 王文冲
%A 郭丽伟
%A 吴曙东
%A 牛萍娟
%A 黄绮
%A 周均铭
%J 半导体学报
%D 2004
%I 
%X Effects of In doping on the optical properties of AlGs/Gs quantum wells (QWs ) and the electrical properties of inverted AlGs/Gs high electron mobility t ransistors (HEMTs) are investigated.It is found that a little In incorporation i n AlGs layers can decrease the photoluminescence linewidths of AlGs/Gs QWs drastically and a little In doping in AlGs layer can significantly increase t he electron mobilities of inverted AlGs/Gs HEMTs at 77K.All these results de monstrate that In doping can reduce the interface roughness due to In as a surfa ctant which can enhance the surface migration of Al adatoms during molecular bea m epitaxy.
%K quantum wells
%K high electron mob ility transistor
%K interface roughness
%K photoluminescence
%K surfactant<br>量子阱
%K 高电子迁移率晶体管
%K 界面粗糙度
%K 光致发光
%K 表面活化剂
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=594BF239DBA94F0E&yid=D0E58B75BFD8E51C&vid=C5154311167311FE&iid=9CF7A0430CBB2DFD&sid=A91C28383511878F&eid=8FC26EAE44BDA92A&journal_id=1674-4926&journal_name=半导体学报&referenced_num=0&reference_num=10