Formation of Selective Porous Silicon Array Using Boron Ion Implantation
硼离子选择注入制备多孔硅微阵列

According to the different porous silicon fabricating process of p type and n type silicon substrate,a new technology of boron ion implantation to form a selective p type array on n type substrate is introduced.After electrochemical etching process,a selective porous silicon is obtained.By this way,the defects of the conventional mask technology are avoided.The selective porous silicon array is characterized by AFM and SEM.