%0 Journal Article
%T Formation of Selective Porous Silicon Array Using Boron Ion Implantation<br>硼离子选择注入制备多孔硅微阵列
%A Chen Shaoqiang
%A Shao Li
%A Wang Weiming
%A Zhu Jianzhong
%A Zhu Ziqiang
%A <br>陈少强
%A 邵丽
%A 王伟明
%A 朱建中
%A 朱自强
%J 半导体学报
%D 2004
%I 
%X According to the different porous silicon fabricating process of p type and n type silicon substrate,a new technology of boron ion implantation to form a selective p type array on n type substrate is introduced.After electrochemical etching process,a selective porous silicon is obtained.By this way,the defects of the conventional mask technology are avoided.The selective porous silicon array is characterized by AFM and SEM.
%K selective porous silicon array
%K electrochemical etching
%K boron ion implantation<br>多孔硅微阵列
%K 选择性
%K 电化学腐蚀
%K 硼离子选择注入
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=C3A75A58E577096D&yid=D0E58B75BFD8E51C&vid=C5154311167311FE&iid=DF92D298D3FF1E6E&sid=C79A3F06E2AC5B9E&eid=CE504F5B1E192581&journal_id=1674-4926&journal_name=半导体学报&referenced_num=1&reference_num=11