|
半导体学报 1990
Experimental Study of Inversion Layer Subband Structure on HgCdTe
|
Abstract:
The measurements of capacitance spectroscopy, magnetotransport oscillation and cyclotronresonance for LPE HgCdTe MIS structure samples are performed at temperature of 4.2 K, andthe inversion layer electron concentration N_3 dependent subband structures including subbandenergy E_0, Fermi energy E_f, effective mass M~*, average depth of inversion layer Z_0 anddepletion layer depth Z_d in the electric quantum limit are determined quantitatively from theexperimental measurements by using the physical parameter fitting method (PPFM).