%0 Journal Article
%T Experimental Study of Inversion Layer Subband Structure on HgCdTe<br>Hg_(1-x)Cd_xTe反型层子能带结构的实验研究
%A Junhao Chu/National Laboratory for Infrared Physics
%A <br>褚君浩
%A R.Sizmann
%A F.Koch
%A J.Ziegler
%A H.Maier
%J 半导体学报
%D 1990
%I 
%X The measurements of capacitance spectroscopy, magnetotransport oscillation and cyclotronresonance for LPE HgCdTe MIS structure samples are performed at temperature of 4.2 K, andthe inversion layer electron concentration N_3 dependent subband structures including subbandenergy E_0, Fermi energy E_f, effective mass M~*, average depth of inversion layer Z_0 anddepletion layer depth Z_d in the electric quantum limit are determined quantitatively from theexperimental measurements by using the physical parameter fitting method (PPFM).
%K 2 DEG
%K Subband
%K HgCdTe
%K Surface
%K Interface<br>HgCdTe
%K 能带结构
%K 反型层子
%K 实验
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=8B386B0A18766F386C7287EEF629BDB1&yid=8D39DA2CB9F38FD0&vid=708DD6B15D2464E8&iid=94C357A881DFC066&sid=2E01F39B6CBD53DE&eid=9D9F10A828991FA6&journal_id=1674-4926&journal_name=半导体学报&referenced_num=2&reference_num=2