Fabrication of WSi_x Micron Structures Using RIE in SF_6-N_2 Mixture
用SF_6-N_2混合气的反应离子刻蚀制作WSi_x微米结构

This paper reports experiments on reactive ion etching of WSi_x using SF_6-Ar and SF_6-N_2as etchants.Etching characteristics are well studied with SF_6-N_2 system. N_2 is found to besuperior as a diluent of SF_6 in etching micrometen structures of WSi_x, and having good repeatability.GaAs MESFET and OEIC devices have been fabricated with the etching.