%0 Journal Article
%T Fabrication of WSi_x Micron Structures Using RIE in SF_6-N_2 Mixture<br>用SF_6-N_2混合气的反应离子刻蚀制作WSi_x微米结构
%A Cheng Meiqiao/Institute of Semiconductors
%A Academia Sinica
%A Beijing Fu Shaoyun/Institute of Semiconductors
%A Academia Sinica
%A Beijing Li Jianzhon/Institute of Semiconductors
%A Academia Sinica
%A Beijing
%A <br>程美乔
%A 傅绍云
%A 李建中
%J 半导体学报
%D 1990
%I 
%X This paper reports experiments on reactive ion etching of WSi_x using SF_6-Ar and SF_6-N_2as etchants.Etching characteristics are well studied with SF_6-N_2 system. N_2 is found to besuperior as a diluent of SF_6 in etching micrometen structures of WSi_x, and having good repeatability.GaAs MESFET and OEIC devices have been fabricated with the etching.
%K SF_(6-)N_2
%K mixture
%K reactive ion etching
%K micron structures of WSi_(?)<br>SF－N混合气
%K 离子刻蚀
%K Wsi微米结构
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=8B386B0A18766F38AC33C5B136A7B2DB&yid=8D39DA2CB9F38FD0&vid=708DD6B15D2464E8&iid=94C357A881DFC066&sid=26AEEED215BE97D0&eid=3356A7630A93A219&journal_id=1674-4926&journal_name=半导体学报&referenced_num=0&reference_num=0