Effects of Nitrogen on Grown-in Oxygen Precipitates in Large Diameter Czochralski Silicon
大直径直拉硅中氮对原生氧沉淀的影响

The effect of nitrogen on grown-in oxygen precipitates in large diameter Czochralski (CZ) silicon is investigated.After one-step high temperature annealing and low-high temperature two-step annealing,it is found the behavior of oxygen precipitation in nitrogen-doped CZ (NCZ) silicon is significantly different from that in the conventional CZ silicon.The oxygen precipitation in voids zone is much heavier than that in OSF-ring zone in NCZ silicon after one-step high temperature annealing,while less than that in OSF-ring zone after low-high temperature two-step annealing.It is believed that the size and distribution of grown-in oxygen precipitates are changed by nitrogen doping by the means of vacancies.Based on these facts,the effect mechanism of nitrogen doping on grown-in oxygen precipitates is discussed.