%0 Journal Article
%T Effects of Nitrogen on Grown-in Oxygen Precipitates in Large Diameter Czochralski Silicon<br>大直径直拉硅中氮对原生氧沉淀的影响
%A Yu Xuegong
%A Yang Deren
%A Yang Jiansong
%A Ma Xiangyang
%A Li Liben
%A Que Duanlin
%A <br>余学功
%A 杨德仁
%A 杨建松
%A 马向阳
%A 李立本
%A 阙端麟
%J 半导体学报
%D 2003
%I 
%X The effect of nitrogen on grown-in oxygen precipitates in large diameter Czochralski (CZ) silicon is investigated.After one-step high temperature annealing and low-high temperature two-step annealing,it is found the behavior of oxygen precipitation in nitrogen-doped CZ (NCZ) silicon is significantly different from that in the conventional CZ silicon.The oxygen precipitation in voids zone is much heavier than that in OSF-ring zone in NCZ silicon after one-step high temperature annealing,while less than that in OSF-ring zone after low-high temperature two-step annealing.It is believed that the size and distribution of grown-in oxygen precipitates are changed by nitrogen doping by the means of vacancies.Based on these facts,the effect mechanism of nitrogen doping on grown-in oxygen precipitates is discussed.
%K nitrogen doping
%K Czochralski silicon
%K grown-in oxygen precipitates<br>掺氮
%K 直拉硅
%K 原生氧沉淀
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=31A19355FC63554D&yid=D43C4A19B2EE3C0A&vid=B91E8C6D6FE990DB&iid=CA4FD0336C81A37A&sid=2A3781E88AB1776F&eid=8E6AB9C3EBAAE921&journal_id=1674-4926&journal_name=半导体学报&referenced_num=5&reference_num=13