Compensation Characteristics of Deep Energy Level Impurity Zn to n-Type Silicon
深能级杂质Zn对n型硅半导体的补偿特性

In order to obtain mono-crystal silicon thermistor material having high B-value,deep energy level impurity Zn is doped into n-type silicon using a high temperature gas phase diffusion method.Highly compensated silicon material is obtained.The characteristics of the material are measured and analyzed.It is shown that the compensated silicon material has thermally sensitive characteristics.The B-constant of the material is about 6300K and the resistance-temperature relationship of the material depends on the compensation degree of impurities.