%0 Journal Article
%T Compensation Characteristics of Deep Energy Level Impurity Zn to n-Type Silicon<br>深能级杂质Zn对n型硅半导体的补偿特性
%A Cai Zhijun
%A Ba Weizhen
%A CHEN Zhaoyang
%A CUI Zhiming
%A Cong Xiuyun
%A <br>蔡志军
%A 巴维真
%A 陈朝阳
%A 崔志明
%A 丛秀云
%J 半导体学报
%D 2005
%I 
%X In order to obtain mono-crystal silicon thermistor material having high B-value,deep energy level impurity Zn is doped into n-type silicon using a high temperature gas phase diffusion method.Highly compensated silicon material is obtained.The characteristics of the material are measured and analyzed.It is shown that the compensated silicon material has thermally sensitive characteristics.The B-constant of the material is about 6300K and the resistance-temperature relationship of the material depends on the compensation degree of impurities.
%K deep energy level impurity
%K Fermi level
%K majority carrier
%K degree of compensation<br>深能级杂质
%K 费米能级
%K 多数载流子
%K 补偿度
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=47EB1483900F6F51&yid=2DD7160C83D0ACED&vid=96C778EE049EE47D&iid=B31275AF3241DB2D&sid=D932AD0F8FDA3032&eid=CF89D3C02791C82E&journal_id=1674-4926&journal_name=半导体学报&referenced_num=0&reference_num=12