Evolution Residual In-Plane Stress During Curing Process and Thermal Treatment of COB Packages
板上芯片固化及热处理过程中表面残余应力的演变

A silicon piezoresistive sensor is applied here to in-situ record the curing stress profile,the distributions of the residual stress and the stress evolution profile during thermal treatment. It is also found that the residual stress will accumulate dramatically in the thermal treatment after 20 days' storage in air after the curing process,while the residual stress will be stabilized in a relatively low level after thermal treatment next to the curing process.