%0 Journal Article
%T Evolution Residual In-Plane Stress During Curing Process and Thermal Treatment of COB Packages<br>板上芯片固化及热处理过程中表面残余应力的演变
%A Sun Zhiguo
%A Zhang Qun
%A Huang Weidong
%A Jiang Yuqi
%A Cheng Zhaonian
%A Luo Le
%A <br>孙志国
%A 张群
%A 黄卫东
%A 蒋玉齐
%A 程兆年
%A 罗乐
%J 半导体学报
%D 2002
%I 
%X A silicon piezoresistive sensor is applied here to in-situ record the curing stress profile,the distributions of the residual stress and the stress evolution profile during thermal treatment. It is also found that the residual stress will accumulate dramatically in the thermal treatment after 20 days' storage in air after the curing process,while the residual stress will be stabilized in a relatively low level after thermal treatment next to the curing process.
%K silicon piezoresistive sensor
%K curing
%K thermal treatment
%K residual stress<br>硅压阻应力传感器
%K 固化
%K 热处理
%K 残余应力
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=0C8152603FFD3B8C&yid=C3ACC247184A22C1&vid=EA389574707BDED3&iid=5D311CA918CA9A03&sid=3893EBCAC6700388&eid=750AE535ABE3D62A&journal_id=1674-4926&journal_name=半导体学报&referenced_num=3&reference_num=8