Theoretical Calculation of Optimum Doping Content for Oxide Semiconductor Films
透明导电薄膜最佳掺杂含量的理论计算

Analysis of experimental transparent semiconductor oxide conductive films with various doping levels is presented.A parabola equation of relationship among the physical property,crystal structure,preparation method and doping content is established.The extreme value of this equation determines the optimum doping content.The optimum doping contents of aluminum doped zinc oxide films,tin doped indium oxide films and antimony doped stannic oxide films determined by this quantitative method agree partly with the experimental results.