%0 Journal Article
%T Theoretical Calculation of Optimum Doping Content for Oxide Semiconductor Films<br>透明导电薄膜最佳掺杂含量的理论计算
%A Fan Zhixin
%A <br>范志新
%J 半导体学报
%D 2002
%I 
%X Analysis of experimental transparent semiconductor oxide conductive films with various doping levels is presented.A parabola equation of relationship among the physical property,crystal structure,preparation method and doping content is established.The extreme value of this equation determines the optimum doping content.The optimum doping contents of aluminum doped zinc oxide films,tin doped indium oxide films and antimony doped stannic oxide films determined by this quantitative method agree partly with the experimental results.
%K transparent conductive films
%K crystal structure
%K preparation method
%K optimum doping content<br>透明导电薄膜
%K 晶体结构
%K 制备方法
%K 最佳掺杂含量
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=9D3A2BD793CDC0D5&yid=C3ACC247184A22C1&vid=EA389574707BDED3&iid=B31275AF3241DB2D&sid=4081E94A71AB3C30&eid=106103EB0EA31435&journal_id=1674-4926&journal_name=半导体学报&referenced_num=3&reference_num=18