Comparative Study on Photoasissted Wet Etching Behavior of GaN/GaAs(001) and GaN/Al2O3(0001)Epilayers
GaN/GaAs(001)与GaN/Al_2O_3(0001)外延层光辅助湿法腐蚀行为的比较

Photoassisted wet chemical etching of cubic GaN (c-GaN) on GaAs(001) epilayers grown by metalorganic vapor phase epitaxy (MOVPE) is investigated.Compared with the etching of hexagonal GaN (h-GaN) grown on Al_2O_3(0001),it is found that the photoassisted wet etching behavior of c-GaN grown on GaAs is different from that of h-GaN on sapphire.The possible reason causing the difference is discussed.