%0 Journal Article
%T Comparative Study on Photoasissted Wet Etching Behavior of GaN/GaAs(001) and GaN/Al2O3(0001)Epilayers<br>GaN/GaAs(001)与GaN/Al_2O_3(0001)外延层光辅助湿法腐蚀行为的比较
%A Shen Xiaoming
%A Zhang Xiulan
%A Sun Yuanping
%A Zhao Degang
%A Feng Gan
%A Zhang Baoshun
%A Zhang Zehong
%A Feng Zhihong
%A Yang Hui
%A <br>沈晓明
%A 张秀兰
%A 孙元平
%A 赵德刚
%A 冯淦
%A 张宝顺
%A 张泽洪
%A 冯志宏
%A 杨辉
%J 半导体学报
%D 2002
%I 
%X Photoassisted wet chemical etching of cubic GaN (c-GaN) on GaAs(001) epilayers grown by metalorganic vapor phase epitaxy (MOVPE) is investigated.Compared with the etching of hexagonal GaN (h-GaN) grown on Al_2O_3(0001),it is found that the photoassisted wet etching behavior of c-GaN grown on GaAs is different from that of h-GaN on sapphire.The possible reason causing the difference is discussed.
%K cubic-GaN
%K MOVPE
%K photoassisted wet etching<br>立方GaN
%K MOVPE
%K 光辅助湿法腐蚀
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=C87FDFC58654A92F&yid=C3ACC247184A22C1&vid=EA389574707BDED3&iid=5D311CA918CA9A03&sid=E348995F86F60FD3&eid=745C7FAEA69986C7&journal_id=1674-4926&journal_name=半导体学报&referenced_num=0&reference_num=13