Characterization of Doping Concentration for Strained Si_(1-x)Ge_x Material
应变Si_(1-x)Ge_x材料掺杂浓度的表征技术

The relation between the resistivity and the dopi ng concentration with the different Ge composition was obtained based on a new majority carrier mobility model of the strained Si 1-xGe x material.According to this relation,the doping concentration of the strained Si 1-x Ge x can be measured using a collinear four-probe array.The experimental results have a good reliability and reproducibility.The characterization technique is compatible with the on-line measure of the doping concentrations of Si and much more simple and convenient.