%0 Journal Article
%T Characterization of Doping Concentration for Strained Si_(1-x)Ge_x Material<br>应变Si_(1-x)Ge_x材料掺杂浓度的表征技术
%A 戴显英
%A 张鹤鸣
%A 王伟
%A 胡辉勇
%A 吕懿
%A 舒斌
%J 半导体学报
%D 2003
%I 
%X The relation between the resistivity and the dopi ng concentration with the different Ge composition was obtained based on a new majority carrier mobility model of the strained Si 1-xGe x material.According to this relation,the doping concentration of the strained Si 1-x Ge x can be measured using a collinear four-probe array.The experimental results have a good reliability and reproducibility.The characterization technique is compatible with the on-line measure of the doping concentrations of Si and much more simple and convenient.
%K Si
%K 1-xGe
%K x material
%K four-probe array
%K resistivity
%K doping concentration
%K mobility model
%K characterization<br>Si_(1-x)Ge_x材料
%K 四探针
%K 电阻率
%K 掺杂浓度
%K 迁移率模型
%K 表征
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=5B32432D00B24FE68916621324142F1C&yid=D43C4A19B2EE3C0A&vid=B91E8C6D6FE990DB&iid=9CF7A0430CBB2DFD&sid=7C8C2BAFC9BA0571&eid=114891522AE71A91&journal_id=1674-4926&journal_name=半导体学报&referenced_num=1&reference_num=0